PRODUCTION DEVELOPMENT OF SILICON PLANAR EPITAXIAL TRANSISTOR WITH A MAXIMUM OPERATING FAILURE RATE OF 0.0010/0 PER 1000 HOURS AT A CONFIDENCE LEVEL OF 90( AT 25 C
Abstract
Effort is made to improve production techniques in order to increase the reliability of silicon planar epitaxial transistor type 2N696 with a maximum operating failure rate of 0.001% per 1000 hours at a 90% confidence level at 25 C. as an objective. The failure rate is an objective, and as a minimum all of the following processes are to be improved toward attaining or exceeding the specified failure rate: surface preparation, diffusion processing, epitaxial starting material, wire bonding, metallizing and geometry definition. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 31, 1962
- Accession Number
- AD0292071
Entities
People
- Benjamin R. Davis
- George V. Russell
Organizations
- Motorola Mobility