INVESTIGATION OF THE MECHANISM OF SINGLE CRYSTAL GROWTH IN HIGH TEMPERATURE SYSTEMS
Abstract
High temperature vapor deposition techniques have been successfully adapted to the growth of single crystals of Sn (IV) and Cd oxides. Crystallization and growth were studied under both neutral and oxidizing conditions and the various parameters effecting crystal size, purity and perfection were evaluated. The use of a He-O gas mixture for vapor transport was found to substantially benefit the growth process by eliminating both bulk and surface defects. A discussion is presented of past electrical measurements performed on Sn oxide films and ceramics together with some of the difficulties in interpreting non-single crystal data. The results of resistivity, Hall effect and optical measurements on Sn oxide single crystal grown by the present method are reported. Other measurements include studies on the crystal sructure and perfection of synthetic Sn oxide by x-ray and microscopic techniques; electron spin resonance studies on Sn oxide crystals contining vanadium impurity additions; and a discusion of analytical methods which were applied to trace impurity analysis on single crystals of both Cd and Sn oxides. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1962
- Accession Number
- AD0292114
Entities
People
- J.a. Marley
- T.c. Macavoy
Organizations
- Corning Inc.