GALLIUM ARSENIDE DENDRITE SINGLE CRYSTAL PROGRAM
Abstract
Dendritic GaAs material has been obtained from a 7-in. exploratory pulling furnace. The techniques learned for stoichiometry and tempera ure control are being applied in the construction of a 14- and a 24-in. pulli g fur ace Reproducibili y of results has been improved in the opentube diffusion process. Detection of partial surface conversion of GaAs to GaP by a reflection method has been explored. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 24, 1962
- Accession Number
- AD0292709
Entities
Organizations
- Westinghouse Electric Corporation