RADIATION ENHANCED DIFFUSION IN SILICON. 2. DESIGN OF A MICROCALORIMETER. STORED ENERGY MEASUREMENT IN IRRADIATED GERMANIUM. 3. STUDY OF DEFECT MOBILITY IN IRRADIATED GERMANIUM

Abstract

Radiation enhanced diffusion of impurities has been studied on silicon irradiated at high temperatures (800 to 1100 C) by 250-1000 kev protons. Electrically active impurities, as shown by position of p-n junctions, diffuse faster in irradiated regions. A point defect mechanism is proposed, and a diffusion coefficient of the active defect is obtained. A cryostat and calorimeter were designed for a stored energy measurement in germanium irradiated at 20 K by 2 Mev electrons. Problems of heat transfer and insulation are discussed. Radiation induced defects have been shown, in former work, to drift in the electric field of a p-n junction, irradiated with electrons or gamma-rays. The same effect occurred with neutron irradiation. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 25, 1962
Accession Number
AD0292762

Entities

People

  • J.c. Pfister
  • P. Baruch

Organizations

  • École Normale Supérieure

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Coefficients
  • Diffusion
  • Diffusion Coefficient
  • Electric Fields
  • Electrons
  • Energy
  • Gamma Rays
  • Germanium
  • Heat Transfer
  • High Temperature
  • Impurities
  • Measurement
  • Neutron Bombardment
  • P-N Junctions
  • Point Defects
  • Radiation

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Nuclear and Radiation Engineering.
  • Thermal Physics or Thermal Science.

Technology Areas

  • Microelectronics