RESEARCH AND DEVELOPMENT OF SOLID STATE TUNNEL DEVICES AND ARRAYS CAPABLE OF OPERATION AT MICROWATT POWER LEVELS
Abstract
Research was continued on solid state tunnel devices capable of non-linear and active operation at low power levels. Studies continued on small area backward and tunnel diodes fabricated on semiconductor substrates and capable of operating in the microampere range. In order to fabricate small area tunneling devices, an extensive study of the oxide masking technique of alloying evaporated aluminum to degenerate silicon was performed. However, high excess current in the formed pn junctions could not be reduced satisfactorily. Alloying of aluminum wire, doped with 2.5% boron, to etched surfaces of 0.003 ohm-cm n-type silicon resulted in the formation of devices useful as microampere backward diodes. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1963
- Accession Number
- AD0294157