SEMICONDUCTOR THIN FILMS

Abstract

A new source has been designed to eliminate sticking particles on silicon and any future gallium arsenide deposits. Deposits of germanium, gallium arsenide and silicon have defects which are detectable by x-ray diffraction examination as a light diffuse X centered on the main diffraction spot. Electron microscopy of germanium and gallium arsenide films, peeled from calcium fluoride, which are thin enough for examination shows the presence of enough defects to account for the diffuse x-ray reflections. A small fused silica vacuum system will be made and used for deposition. The system will be baked at 500 - 1000 C while pumped to 1 microtorr, then sealed with molten tin or germanium and cooled. Silicon will be deposited by heating the source and substrate holder inductively. Deposits of germanium and gallium arsenide on calcium fluoride were measured for resistivity and conductivity type and submitted for mobility measurements.

Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1962
Accession Number
AD0294491

Entities

People

  • J.m. Axelrod

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Diffraction
  • Electron Microscopy
  • Films
  • Fluorides
  • Gallium
  • Gallium Arsenides
  • Germanium
  • Microscopy
  • Optical Materials
  • Semiconductors
  • Thin Films
  • X Rays
  • X-Ray Diffraction

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene