ACTIVE THIN-FILM TECHNIQUES MICROMIN PROGRAM
Abstract
Research was continued to develop a process for depositing device-quality silicon and/or germanium films on polycrystalline insulating substrates by vacuum evaporation of silicon and/or germanium, then to form diodes and transistors in these films. The ultra-high vacuum evaporator was installed in the laboratory and a total of 29 silicon depositing runs were made. The results of high magnification optical examination of the silicon films for surface structure are encouraging. Optical studies and Hall Effect measurements were carried out on silicon films produced by pyrolytic deposition, and vacuum deposition. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 14, 1963
- Accession Number
- AD0294715
Entities
People
- Egons Rasmanis
- James Cline
Organizations
- Sylvania Electric Products