RESEARCH AND INVESTIGATION OF MATERIALS FOR LASER APPLICATIONS
Abstract
During the past quarter, techniques have been developed for fabricating germanium arsenide(GA) diodes. One diode was made from a GA crystal containing neodymium and its electroluminescence characteristics measured at several temperatures. Normal zinc-doped GA luminescence was observed, but no neodymium emission lines were seen. Absorption and fluorescence measurements on the same material also failed to reveal neodymium lines. Rough calculations indicated that the neodymium concentration may have to be considerably higher than could have existed in that material before significant neodymium emission can be seen. Diffusion doping of GA and germanium alloys with neodymium are now being studied. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1962
- Accession Number
- AD0294771
Entities
People
- R. Fitzpatrick
- S.e. Sobottka
Organizations
- Watkins-Johnson Company