DESIGN CONSIDERATIONS FOR MICROWAVE GERMANIUM TUNNEL DIODES

Abstract

A discussion is presented on the technology and problems involved in the design considerations, fabrication, and measurement of germanium tunnel diodes. Fabrication includes material preparation, methods of creating abrupt p-n junctions such as dot alloying, electrical forming or pulse discharge forming and solution growth, etching procedures necessary to obtain low peak currents and high peak to valley current ratios, and packaging considerations for low series inductance. Measurement techniques to determine the important high-frequency parameters, RS, LS, C, and RN, of the diode are discussed. The results of experimental units exhibiting cutoff frequencies up to 5 gc are tabulated. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1962
Accession Number
AD0294788

Entities

People

  • K. Klohn
  • L. Wandinger

Organizations

  • United States Army Communications-Electronics Command

Tags

DTIC Thesaurus Topics

  • Absorbers (Materials)
  • Advanced Materials
  • Diodes
  • Engineered Materials
  • Fabrication
  • Frequency
  • Germanium
  • Inductance
  • Materials
  • Measurement
  • Microwaves
  • P-N Junctions
  • Packaging
  • Tunnel Diodes

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Semiconductor Device Technology
  • Systems Analysis and Design