VARIABLE ENERGY GAP DEVICES
Abstract
A considerable number of variable gap and single gap cells were fabricated and tested. Studies of surface resistivity and carrier concentration as a function of zinc diffusion were carried out at temperatures of 500, 550 and 600 deg C. Photo parameters were improved; diode characteristics were uniformly good. Chemical polishing of gallium arsenide wafers was incorporated as a routine fabrication step. The etchant used for polishing was a sulfuric acid-peroxide solution. Open flow synthesis of GaP using elemental P and Ga2O3 was successfully carried out. Dense growths of GaP needles were observed. Spectro-analysis indicated good purity. The needles are single phase GaP of single crystal structure. Epitaxial growth of GaP layers on GaAs substrates was carried out by two methods. The first method, using Ga2O3 and elemental P in an open flow system is new for this purpose. The second method was by iodine transport in a closed system. Tentative results indicate both methods produced good epitaxial layers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 30, 1962
- Accession Number
- AD0295582
Entities
People
- George N. Webb
- L. E. Stone