PRODUCTION RELIABILITY IMPROVEMENT PROGRAM FOR GERMANIUM TRANSISTOR 2N1430
Abstract
Effort was continued toward improving production techniques to improve the reliability of the 2N1430 germanium transistor using as an objective a maximum operating failure rate of 0.05% per 1000 hours at a 90% confidence level of <% C. Major areas considered were: (1) resistivity control, etch pit control, uniform penetration in diffusion depth control in alloying, spr ding and wetting in alloying, collector attachment, surface passivation, final preparation prior to sealing, gettering technique, and leak determination; ( <) information and data to demonstrate the results in the areas of study; and (3) quality control measures to insure accuracy and reliability of established process techniques.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 31, 1962
- Accession Number
- AD0295692
Entities
People
- Dennis Fallon
- Henry Sivik
- John Szafranski