THE TRAVELLING SOLVENT METHOD OF CRYSTAL GROWTH

Abstract

Large crystals of alpha-SiC have been grown from solution in chromium by the traveling solvent method at an average temperature of ca. 1800 C. The major problem has been the proper wetting of the SiC surface by chromium; this problem has not been solved using an ultrahigh vacuum heating treatment, followed by the evaporation of chromium onto the clean surfaces. Preliminary experiments using silicon and platinum as solvents have shown encouraging results.

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Document Details

Document Type
Technical Report
Publication Date
Dec 15, 1962
Accession Number
AD0295726

Entities

People

  • A. I. Mlavsky
  • L. B. Griffiths
  • M. A. Wright

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Compound Semiconductors
  • Contracts
  • Crystal Growth
  • Crystals
  • Electron Beams
  • Fabrication
  • Films
  • Government Procurement
  • Governments
  • Heat Energy
  • Melting Point
  • Optical Pyrometers
  • Radiation
  • Silicon Carbide
  • Temperature Gradients
  • Vacuum

Readers

  • Finite Element Method (FEM) for solving Partial Differential Equations (PDEs)
  • Materials Science and Engineering.
  • Thin Film Deposition Science.