INVESTIGATION OF HOT ELECTRON EMITTER

Abstract

Analysis is presented of the frequency performance of various metal-base hot carrier triode amplifiers which differ only in the type of hot carrier emitter they utilize. The triodes considered are: (1) the SMS, or semiconductor metal-semiconductor, triode utilizing a Schottky barrier emitter; (2) the space charge limited emitter triode; and (3) the tunnel-emitter triode. The results are compared with the performance of the bipolar germanium junction transistor. It is shown that for all three hot carrier triodes, the maximum gain-band product increases with current density and approaches an asymptotic limit which is due to collector limitation. It is further shown, however, that this limit is closely approached at reasonable current density only by the SMS triode. At an emitter current density of 1000 amp/sq cm and a stripe width of 10 microns, the maximum gain band products or maximum oscillating frequencies, are 60 kmc/sec for the SMS triode, 38 for the space charge limited emitter triode, and 10 for the tunnel-emitter triode.

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Document Details

Document Type
Technical Report
Publication Date
Nov 30, 1962
Accession Number
AD0295746

Entities

People

  • M. M. Atalla

Organizations

  • Air Force Cambridge Research Laboratories

Tags

Communities of Interest

  • Advanced Electronics
  • Human Systems
  • Weapons Technologies

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Amplifiers
  • Bipolar Junction Transistors
  • Conduction Bands
  • Contracts
  • Current Density
  • Energy Bands
  • Equations
  • Figure Of Merit
  • Frequency
  • Massachusetts
  • New Jersey
  • New York
  • Npn Transistors
  • Semiconductors
  • United States

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  • Electronics Engineering
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Space
  • Space - Hall-Effect Thruster