THEORETICAL AND EXPERIMENTAL STUDY OF THE COMBINED HALL-MAGNETO RESISTANCE EFFECT
Abstract
A new group of microwave devices based on the Hall-Effect is being sought. Following a preliminary study of a 2 mc amplifier, with an electronic gain of 43 db, a frequency converter at the S-band region of the microwave spectrum was built and gave a conversion loss of 20 to 30 db. Attempts are being made to combine the Hall sample with special materials such as rutile or YIG to achieve better conversion gain by improving the coupling to the RF magnetic fields. A novel scheme based entirely on enhanced interaction between the Hall sample and its associated circuitry was proposed and analytically examined. The first experimental embodiment of this proposed scheme seems to have yielded a small net gain at a frequency of 3730 mc. Also included are the results of various experiments on microwave Hall-Effect isolators, as well as on fabrication techniques for millimeter wave tunnel diodes. These tunnel diodes were operated as detectors at a frequency of 55 gc. An improvement in sensitivity of 25 db as compared to ordinary crystal detectors was obtained.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 31, 1962
- Accession Number
- AD0296133
Entities
People
- H. J. Prager
- K. K. Chang
- P. E. Chase
Organizations
- Sarnoff Corporation