SEMICONDUCTOR DEVICE CONCEPTS

Abstract

Generation of coherent visible radiation in Ga(As1-xPx) p-n junctions is described. The conditions for generation of coherent visible radiation, the possibilities of wavelength selection, and the extension to and implications of p-n junction lasers in ternary compounds are presented. The electrical properties of Ga(As1-xPx) p-n junctions and their considerable potential for use as avalanche and forward regulator diodes, signal diodes, parametric diodes, and stored charge diodes are described.

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Document Details

Document Type
Technical Report
Publication Date
Nov 30, 1962
Accession Number
AD0296197

Entities

Organizations

  • General Electric

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Diodes
  • Electrical Properties
  • Electronics
  • Electronics Laboratories
  • Energy Bands
  • Government Procurement
  • Governments
  • New Jersey
  • New York
  • P-N Junctions
  • Radiation
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Standards
  • United States

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Materials Science and Engineering.
  • Theoretical Analysis.

Technology Areas

  • Directed Energy
  • Microelectronics