THIN FILM ACTIVE DEVICES

Abstract

The problem of collecting hot electrons from a metal by means of a simple metal-insulator interface is discussed. Backscattering out of the insulator is shown to be a serious problem if high collection efficiencies are desired. Fabrication of tunnel emitters for the Metal Edge Amplifier (MEA) was seriously hindered by shorting through the natural oxide of aluminum. A more fundamental examination of the oxidation process was begun and, in the meantime, attempts will be made to use evaporated insulators for device fabrication.

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Document Details

Document Type
Technical Report
Publication Date
Oct 22, 1962
Accession Number
AD0296312

Entities

People

  • James P. Spratt

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum Oxides
  • Compound Semiconductors
  • Crystal Lattice Vibrations
  • Electron Energy
  • Electrons
  • Fabrication
  • Films
  • Governments
  • Kinetic Energy
  • Materials
  • Measurement
  • Metal Films
  • Metal Oxides
  • Oxides
  • Quantum Mechanics
  • Semiconductors
  • Thin Films

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene