BROADBAND S-BAND REACTANCE AMPLIFIER

Abstract

Broadband paramps can be constructed by making maximum use of the varactor parasitic elements in a filter structure at the plane of the diode. (No coupling lengths of line are required.) Techniques have been developed which allow the varactor diode to exhibit two simultaneous resonant frequencies (at signal and idler) depending upon the geometry of the holding structure. Novel experimental techniques that permit rapid determination of the diode resonances and matching conditions were conceived. The gain bandwidth product of a given diode can be evaluated by passive measurements. Preliminary experimental efforts on parametric amplifiers employing the above principles have yielded single-diode voltage-gain-bandwidth products of 3300 mc at S band.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1962
Accession Number
AD0296366

Entities

People

  • B. Bossard
  • B. Perlman
  • R. Markard
  • R. Pettai
  • R.m. Kurzrok

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Ground and Sea Platforms

DTIC Thesaurus Topics

  • Bandwidth
  • Capacitance
  • Capacitors
  • Diodes
  • Electronics
  • Electronics Laboratories
  • Frequency
  • Frequency Bands
  • Geometry
  • Insertion Loss
  • Microwave Frequency
  • New Jersey
  • Resonant Circuits
  • Resonant Frequency
  • Semiconductors
  • Sidebands
  • Varactor Diodes

Fields of Study

  • Physics

Readers

  • Electronics Engineering