DISTRIBUTED JUNCTION TUNNEL DIODE OSCILLATOR. PHASE II
Abstract
Efforts to determine the feasibility of constructing 10 mw 10 kmc tunnel diode oscillators continued and diode requirements for these oscillators were determined. Various materials, doping elements, and fabrication techniques were investigated to determine the best combination of these to potentially meet the frequency and power requirements. Three packaged and two distributed junction tunnel diode oscillators were designed and built. Using the packaged single diode oscillator, power outputs of 100 microwatts as been obtained in X- band and approximately 1/2 milliwatt at 5 - 6 kmc. Tuning problems held back use of larger capacity, larger peak current diodes which have cutoff frequencies well in excess of 10 kmc. Some circuit changes have been made to eliminate these tuning problems. Using a ring distributed tunnel diode in the distributed oscillator power outputs of 3 mw have been obtained at low frequencies. In addition, a stripline package oscillator is being built. The low impedance of this system should eliminate some of the impedance matching problems with the waveguide oscillators.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 31, 1962
- Accession Number
- AD0296799
Entities
People
- C. Genzabella
- C. Howell
- R. Tenenholtz
Organizations
- Duquesne University