500 C SILICON CARBIDE RECTIFIER PROGRAM

Abstract

Hexagonal silicon carbide crystals are being grown in a Kroll-type furnace by the sublimation technique. In order to obtain greater control over the growth variables a new furnace has been assembled and is being used in a series of experiments. This furnace should give valuable information on crystal growth parameters. The research on grown junction crystals has emphasized the preparation of crystals with a high degree of surface and internal perfection by studying the effect of radiation sinks and cavity geometry. The methods and materials of device fabrication are being studied and adapted to meet stability and quantity processing requirements. Electrical characteristics at various temperatures are given for several encapsulated rectifiers. The electrical properties of these rectifiers had been stabilized by an ambient atmosphere treatment prior to encapsulation.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1963
Accession Number
AD0296942

Entities

People

  • H.c. Chang
  • R.b. Campbell

Organizations

  • Westinghouse Electric Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Ceramic Materials
  • Compound Semiconductors
  • Contracts
  • Crystal Growth
  • Crystals
  • Electrical Properties
  • Electronics
  • Encapsulation
  • Fabrication
  • Government Procurement
  • Governments
  • Materials
  • Semiconductors
  • Silicon Carbide
  • United States

Fields of Study

  • Materials science

Readers

  • Combustion science or combustion engineering.
  • Microwave Engineering.
  • Systems Analysis and Design