SEMICONDUCTOR RESISTIVE ELEMENT

Abstract

The general objective of producing a low temperature coefficient of resistance (TCR) device from a miconductor material was only partially successful. Typical TCR device values above room temperature were never much lower than 150 ppm/C for the silicon resistive element investigated. Low temperature TCR values (at -50 C) were around 500 ppm/C. Load-life stability and resistance to environments (moisture, oxidation) proved as good or better than thinfilm resistors on the market. Specific problems encountered (such as ohmic contacts, resistance adjustment, junction effects, etc.) and their solutions are discussed in detail. A manufacturing procedure for producing a polycrystalline silicon device is included.

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Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1962
Accession Number
AD0297034

Entities

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Artificial Intelligence
  • Chemistry
  • Copper
  • Crystals
  • Electron Beams
  • Films
  • Heat Of Activation
  • High Temperature
  • Low Temperature
  • Manufacturing
  • Materials
  • Metal-Semiconductor Junctions
  • Methanols
  • Navy
  • P-N Junctions
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Thermal Physics or Thermal Science.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems