RESEARCH ON CDTE

Abstract

Investigation concerns the identity and properties of native defects in CdTe. In the course of studying the electrical properties of highpurity single crystals of CdTe, a new center, thought to be a native double acceptor, has been observed. Another approach toward the identification of point defects is the technique of electron paramagnetic resonance. Two resonance lines have been observed so far. A line with a g value of 1.68 is believed to be due to shallow donor impurities. Examinations were also made of fluorescent emission spectra in the zone-refined CdTe and in CdTe subjected to various heat treatments. Some data has been taken with samples immersed in He.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 31, 1963
Accession Number
AD0297057

Entities

People

  • B. Segall
  • M.r. Lorenz
  • R.e. Halsted

Organizations

  • General Electric

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Compound Semiconductors
  • Conduction Bands
  • Critical Temperature
  • Electrical Properties
  • Electron Paramagnetic Resonance
  • Electrons
  • Energy Bands
  • Heat Treatment
  • Magnetic Fields
  • Magnetic Resonance
  • Measurement
  • Paramagnetic Resonance
  • Resonance
  • Solid State Physics
  • Spectra

Fields of Study

  • Materials science

Readers

  • Metallurgy
  • Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics