GALLIUM ARSENIDE EPITAXIAL FILM GROWTH
Abstract
Oxygen was shown to be a major factor in the formation of surface imperfections previously observed. The source of the oxygen in the system was traced to a fault in the palladium furnace. Analyses of commercial hydrochloric acid samples from several sources have been made showing that impurities up to 0.3% (volume) are frequently present. Doping with sulfur in the form of sulfur monochloride yields maximum donor concentrations of 3.7 x 10 to the 18th power/cubic cm. Attempts to achieve higher doping levels with tellurium were not successful. Non-destructive techniques for the measurement of carrier concentration are presented covering the range 10 to the 15th power to 10 to the 19th power for n-type material. Evidence is presented to show that the layers have doping gradients near the interface. Details are given of the procedure for surface preparation, including the etch composition, rotation speed, etchrate and final rinsing and drying of the wafer. An evaluation of the growth rates is also given.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1963
- Accession Number
- AD0402677
Entities
People
- N. Goldsmith