EVAPORATED THIN-FILM DEVICES

Abstract

An improved electrode arrangement for the in sulated-gate thin-film transistor has yielded higher performance and greater ease of fabrica tion. On- to-off current ratios of ten to the seventh power, input resistance exceeding ten to the tenth power ohms, and gain-bandwidth products of 25 megacycles have been obtained with polycrystalline cadmium sulfide films. By de positing all electrodes on top of the semicon ductor, maximum freedom in processing the semi conductor layer is obtained. A novel type of field-effect diode is described.

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Document Details

Document Type
Technical Report
Publication Date
Mar 10, 1963
Accession Number
AD0402887

Entities

People

  • F. V. Shallcross
  • H. Borkan
  • P. K. Weimer

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Amplifiers
  • Band Structures
  • Compound Semiconductors
  • Energy Bands
  • Fabrication
  • Field Effect Transistors
  • Films
  • High Temperature
  • Integrated Circuits
  • Materials
  • Measurement
  • Semiconductors
  • Surfaces
  • Thin Film Transistors
  • Thin Films
  • Transistors

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Thin Film Deposition Science.