ELECTRON INJECTION LASER
Abstract
Indium phosphide technology has been developed to the point where current densities approaching 10 to the 5th power amp/sq cm can be passed through electroluminescent diodes. Evidence of stimu lated emission (narrowing of the emitted line by a factor of 1.5) has been observed in some of the diodes at high current densities. The elec troluminescence of double diffused (Zn-Mn) GaAs diodes was investigated at high currents. No line narrowing was observed. The nature of p-n junctions in GaAs lasers is influenced by the anomalous nature of zinc diffusion in GaAs. The concentration dependence of the zinc diffusion constant in GaAs is known to be the of form D equivalent to ac squared where c is the concen tration of zinc. This behavior suggests a sub stitutional-interstitial mechanism for diffusion. The magnitude of the proportionality constant a and its temperature dependence have been compared w0 Theory. The comparison provides strong evidence for the substitutional- interstitial dif fusion mechanism.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 28, 1963
- Accession Number
- AD0403130
Entities
People
- G. J. Lasher
- K. Weiser
- R. W. Keyes
Organizations
- IBM Thomas J. Watson Research Center