CONTROLLED VARIATION OF DIFFUSED PHOSPHOROUS CONCENTRATION FOR SILICON PNP TRANSISTORS
Abstract
A method for diffusing phosphorous into silicon in order to achieve various surface concen trations was developed. This method utilizes the phosphorous source temperature as a means of controlling the surface concentration over a range of 1 x 10 to the 17th to 5 x 10 to the 19th atoms per cc. Experiments were conducted over a source temperature range of 140 to 240 C during a predeposition stage, at constant time and wafer temperature, followed by redistribution at constant time and temperature. The predeposition source temperature is shown to affect the initial sheet resistance, ultimate sheet resistance and phosphorous concentration without materially affecting the junction depth.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1963
- Accession Number
- AD0403479
Entities
People
- Armand P. Larocque
- Nicholas O. Korolkoff
Organizations
- United States Army Communications-Electronics Command