RESEARCH AND DEVELOPMENT ON HIGH CURRENT TUNNEL DIODES
Abstract
Efforts were continued on the development of techniques for fabricating-high-current tunnel diodes. GaAs tunnel diodes with peak currents of up to 860 amp and efficiencies greater than 60% were fabricated. Process improvements reduced pellet cracking and allow current densities as low as 100 amp to be used while still maintaining good I sub P/I sub V ratios. These improvements will greatly reduce contacting problems. The counterdopant dot alloying process was found to provide very thin effective base wafer thicknesses, further reducing contacting problems, and allowing relatively thick wafers to be used. The dependence of the I sub P/I sub V ratio on current density is more pronounced for Ge than for GaAs. Current densities of about 3, 000 amp/sq cm are required for Ge, if an I sub P/I sub V ratio of 10/1 is to be obtained. This high-current density places restrictions on the contact and base wafer thickness. Packages for 100-amp and 300-amp tunnel diodes were fabricated. The theoretical limit of efficiency for GaAs tunnel diodes is about 70%, while the practical limit for Ge tunnel diodes is about 60%.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1963
- Accession Number
- AD0403482