ELECTRON TRANSPORT PHENOMENA IN BISMUTH AT LIQUID HELIUM TEMPERATURES, PART 1

Abstract

Transport effects were studied in a bismuth single crystal at liquid helium temperatures in a magnetic field. The thermal conductivity was found to be almost entirely due to lattice con ductivity; therefore, the experimental coefficients determined were limited to the following: the isothermal transverse magnetoresistivity, the isothermal Hall resistivity, the (adiabatic) thermoelectric coefficient, the (adiabatic) Nernst-Ettinghausen coefficient, and the trans verse magnetothermal resistivity. The Peltier tensor coefficients were expected (from the Onsager relations) to be too small to be measure able and thus, were not studied here. All these effects, except the thermal resistivity coefficient, exhibit Schubnikov-de Haas type oscillations. The kinetic coefficients of certain transport effects were computed from the experimental coefficients and compared with available theories. A rough analysis of the gross effects was made by a decomposition of each coefficient into a sum of different band contributions, each band being approximated by a Lorentz term. General but not complete agreement between experiment and theory is achieved for both two-band and multi-band models.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1963
Accession Number
AD0403642

Entities

People

  • C. G. Grenier
  • J. M. Reynolds
  • J. R. Sybert

Organizations

  • Louisiana State University

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Apparent Density
  • Band Structures
  • Curve Fitting
  • Cyclotron Resonance
  • Electrons
  • Energy
  • Equations
  • Experimental Data
  • Free Electrons
  • Low Temperature
  • Magnetic Fields
  • Physics
  • Relaxation Time
  • Scattering
  • Solid State Physics
  • Thermal Conductivity
  • Universities

Fields of Study

  • Materials science

Readers

  • Fluid Dynamics.
  • Materials Science and Engineering.
  • Plasma Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene