ADVANCED FUNCTIONAL ELECTRONIC BLOCK DEVELOPMENT
Abstract
The continued exploration of optical, structural and ferroelectric properties of SbSI is described. A comparison of reported values of the shift of optical absorption edge with electric field in several materials brought out that this effect is at least an order of magnitude larger in SbSI than in any other material. Two distinct families of npn planar silicon phototransistors were developed. One with gain beta of 80-120 and the other of 600-800. The photoelectric collection efficiency is highly uniform over the exposed base and is approximately 50%. The speed of response of the phototransistors is a function of light intensity, collector capacitance and gain, and emitter capacitance. Experimentation continued on injection electroluminescence and is further subdivided in sections on zinc diffused GaAs pn junctions, n on p GaAs alloyed junctions, GaAs-CdS pn heterojunctions and BP luminescence. Two studies have been carried out on zinc diffused GaAs junctions. The first deals with effect of Cu on electroluminescence in GaAs. The second concerns fine structure in Edge Elec troluminescence spectra.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 28, 1963
- Accession Number
- AD0403654