STUDY OF FAILURE MECHANISMS
Abstract
Various approaches to the study of properties of semiconductor surfaces are taken up, in particular, the very sensitive electrical-frictional probe which is applied to the study of defects and processing technology under various conditions. The distribution of failures in the manufacturing and testing phase of two military systems are compared, and the factors described which caused failure ratios in the one to e one-seventh those in the other. By various studies, it has been determined that the aging of a semiconductor surface does not take place uniformly, but occurs differently at different regions on the surface. The effect of different types of etching and processing solutions on the photovoltaic response of the surface at individual points is used to investigate the nature of the aging and chemical changes on the surface. Characteristic changes in transis tor performance have been demonstrated from the charging of passivating layers by electrons or ions, from the frictional effects of loose desic cant under vibration, from ultraviolet light, and from steep transients in the non-overload range. In all cases, recovery occurs by a relaxation mechanism, which, if translated to the manufacturer's carefully planned ambient environment, involves time constants often of days or months.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1962
- Accession Number
- AD0403690
Entities
People
- J. W. Dzimianski
- S. M. Skinner
Organizations
- Westinghouse Electric Corporation