A METHOD OF BASIC TEMPERATURE COMPENSATION IN TRANSISTORS

Abstract

A semiconductor device complex, consisting of a diode-transistor combination, that effectively compensates for normal transistor gain variations as a function of temperature has been developed. This device has the characteristics of the normal transistor, except that in the range of O C to 70 C the hFE changes by less than 10%. The complex circuit-wise as if it were an ordinary NPN silicon transistor. In this report a direct comparison is made between the new device and an electronically similar commercially available transistor. In addition, a simple technique called m-slope analysis is presented that gives a method of pinpointing the dominant leakage effects in both planar and mesa transistors and to what extent these effects occur.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1963
Accession Number
AD0403756

Entities

People

  • Richard L. Brayden

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Compensation
  • Contracts
  • Electronic Components
  • Electronics
  • Electronics Laboratories
  • Massachusetts
  • Military Research
  • New Jersey
  • Ordnance Laboratories
  • Semiconductor Devices
  • Semiconductors
  • Space Charge
  • Transistors
  • United States

Fields of Study

  • Physics

Readers

  • Control Systems Engineering.
  • Instructional Design and Training Evaluation.
  • Integrated Circuit Design and Technology.

Technology Areas

  • Microelectronics