DEVELOPMENT OF HIGH TEMPERATURE SEMICONDUCTOR DEVICES

Abstract

Gallium arsenide was chosen as the semiconductor material best suited to meet the needs of high temperature operation because of its wide band gap and high electron mobility. Even though gallium arsenide has the best potential for high temperature operation, it does have a few limitations. One of these being that there are a number of major differences between elemental and compound semiconductors. A number of different devices were developed under this contract. These include: switching diodes, low-power rectifiers, medium-power rectifiers, high-power rectifiers, zener diodes, tunnel diodes, unipolar transistors, switching transistors, power transistors and solid ceramic circuits. Of these, the most successful were tunnel diodes and varactor diodes, since they are able to fulfill the requirements of some specific applications not filled by similar germanium and silicon devices.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1963
Accession Number
AD0403809

Entities

People

  • F. L. Vogel
  • H. Becke
  • N. Ditrick
  • W. A. Bosenberg

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Bipolar Junction Transistors
  • Charge Carriers
  • Compound Semiconductors
  • Electrical Properties
  • Electron Mobility
  • Electronics Laboratories
  • Energy Bands
  • Field Effect Transistors
  • Materials
  • Modules (Electronics)
  • P-N Junctions
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Electronics Engineering
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics