HIGH CURRENT AND HIGH VOLTAGE SILICON CONTROLLED RECTIFIERS

Abstract

Both crucible grown and float-zone silicon crystals were received and processed through the initial stages of device fabrication. Evaluation data on both types of material are presented. Minor modifications of the basic device structure and encapsulation design are noted. Sample fabrication directed toward more complete evaluation of the device design and generation of state-of- art samples is discussed. Some problems which arose during this work are described. Electrical evaluation data on prototype samples (encapsulated) are given.

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Document Details

Document Type
Technical Report
Publication Date
Mar 31, 1963
Accession Number
AD0404066

Entities

Organizations

  • Westinghouse Electric Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Assembly
  • Contracts
  • Cooling
  • Corporations
  • Crucibles
  • Diameters
  • Encapsulation
  • Fabrication
  • Geometry
  • Heat Sinks
  • Ions
  • Materials
  • Prototypes
  • Rectifiers
  • Silicon Controlled Rectifiers
  • Three Dimensional
  • Waves

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