SILICON PLANAR EPITAXIAL TRANSISTOR TYPE 2N2193
Abstract
Contents: Improved KPR resolution Contact evaporation and alloying Collector etching Boron diffusion Phosphorus diffusion Collector Contact to the header Interconnections Reliability Measurement Inspection and quality control plan
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1963
- Accession Number
- AD0404185
Entities
Organizations
- General Electric