RESEARCH INVESTIGATION OF p-i-n ELECTRON JUNCTION DETECTORS
Abstract
For the purposes of studying the response of silicon, lithium-drifted p-i-n junction detectors to electron sources, an extrapolation chamber and its associated circuitry were set up and put in working condition. The measurement of surface dose rates for carefully specified geometries has begun, using a liquid thallium-204 thick source.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1963
- Accession Number
- AD0404588
Entities
Organizations
- HRL Laboratories