BETA-SILICON CARBIDE AND ITS POTENTIAL FOR DEVICES
Abstract
P-type crystals were grown using boron and aluminum additions to the silicon melts. Some difficulty arose as a result of compensation by impurities in the boron employed, but doping levels obtained using aluminum additions appeared quite uniform and amenable to control. Satisfactory results are anticipated for boron when higher purity, zone-refined rod form is used. Ohmic contacts were obtained on low resistivity (0.1 to 1.0 ohm-cm) n-type silicon carbide by soldering gold wires directly to the crystals. A number of crystals were prepared for Hall measurements (five-contact method) using this technique. For high resistivity silicon carbide, ohmic contacts were prepared by flash-fusing carbon-saturated silicon on the crystal surfaces in an arc-image furnace. Rectifying contacts were prepared by this technique using carbon-free silicon of the proper conductivity type. Simple diodes were produced from p-type beta-silicon carbide crystals. Intense light was observed at the emitting junction when some of these diodes were being tested.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 15, 1963
- Accession Number
- AD0405029
Entities
People
- F. A. Halden
- W. E. Nelson
Organizations
- SRI International