SUSCEPTIBILITY IN SEMICONDUCTORS

Abstract

This report is concerned with the magnetic moment M of a plasma consisting of holes and electrons generated by light within a cylindrical semiconductor crystal immersed in a magnetic field. Macroscopic transport equations have been used to derive the dependence of M on field strength, mobility, and surface recombination conditions. In the limits of low and high surface recombination the theoretical result demonstrates the transition between transverse equilibrium (M O) and pure magnetic confinement (M -nkT/B). Experiments using germanium and an inhomogeneous magnetic field directly measured the diamagnetic force exerted by the plasma on its scattering medium. An induction method utilizing a uniform magnetic field of strength up to 70 kgauss gave collateral results. The dependence of the moment on magnetic field strength, light intensity, temperature, and surface recombination velocity support the theory.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1963
Accession Number
AD0405168

Entities

People

  • A. R. Moore
  • J. O. Kessler

Organizations

  • Sarnoff Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Charged Particles
  • Conductivity
  • Current Density
  • Diffusion Coefficient
  • Electron Density
  • Electrons
  • Equations
  • Experimental Data
  • Geometry
  • Magnetic Fields
  • Magnetic Moments
  • Magnetic Properties
  • Measurement
  • Scattering
  • Semiconductors
  • Thermal Conductivity

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Plasma Physics / Magnetohydrodynamics

Technology Areas

  • Microelectronics