TRANSVERSE MAGNETORESISTANCE OF ALUMINUM

Abstract

Because Al shows promise as a conductor suitable for a cryogenic magnet, its transverse magnetoresistance was studied. The measurements were made on six samples of 99.999 percent pure aluminum at 4.2 K in magnetic fields H up to 120,000 gauss, the samples having been annealed, and in two cases cold worked, so as to be in various states of strain. Valid data were obtained from four of the samples, for which the ratios (at H O) of room temperature resistivity R(300 K) to the resistivity R at 4.2 K were 1530, 1180, 1075, and 333. Almost all of the resistivity decrease gained at H O by using a less strained metal is preserved at high magnetic fields for a metal whose magnetoresistance exhibits a predominately saturating behavior. The data from the 4 samples were normalized fairly well by Kohler's rule. This indicates that further reductions in the power necessary to operate cryogenic magnets can be profitably achieved by using purer Al.

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Document Details

Document Type
Technical Report
Publication Date
May 09, 1963
Accession Number
AD0405879

Entities

People

  • J. Babiskin
  • P. G. Siebenmann

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Aluminum
  • Band Structures
  • Crystal Structure
  • Crystals
  • Electrons
  • Energy Bands
  • Fermi Surfaces
  • Free Electrons
  • Government Procurement
  • Low Temperature
  • Magnetic Fields
  • Magnetoresistance
  • Metals
  • Military Research
  • Orientation (Direction)
  • Resistance
  • Single Crystals

Fields of Study

  • Physics

Readers

  • Educational Psychology
  • Superconducting Magnet Technology
  • Thin Film Deposition Science.