IN-PILE HALL COEFFICIENT AND CONDUCTIVITY MEASUREMENTS ON ZONE-REFINED P-TYPE SILICON
Abstract
The Hall coefficient and conductivity have been measured during pile irradiation for a number of zone-refined p-type silicon crystals with initial resistivities of 1, 8, and 100 ohm-cm. The conductivity of zone-refined silicon shows much faster changes with irradiation than pulled silicon samples of equivalent resistivity. The 100-ohm-cm samples exhibit a monotonic nonlinear decrease of 1n sigma (conductivity) vs phi f (integrated fast flux), whereas the other samples with initial Fermi levels closer to the valence band have one or two regions of linear decrease in 1n sigma vs phi f before the nonlinear de crease region is observed. The Hall mobility for the 100-ohm-cm samples decreases and becomes negative as a result of the carrier density decreasing with irradiation. In the case of the 8-ohm-cm sample, the Hall mobility decreases with irradiation, whereas the 1-ohm-cm sample shows no change in Hall mobility with irradiation up to the maximum integrated flux used in the present experiment. The origins of the dependence of 1n sigma on phi f as well as the behavior of the Hall coefficient and Hall mobility with irradiation are discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 13, 1963
- Accession Number
- AD0407073
Entities
People
- C. M. Williams
- G. C. Bailey
Organizations
- United States Naval Research Laboratory