INVESTIGATION OF SOLID STATE ELECTROLYTE

Abstract

This investigation concerned the role of imperfections in solids, particularly the interactions between various types of chemical defects and be tween chemical defects and crystal defects in semiconductors. One part of the study was a theoretical analysis of substituents of Group-IV elements in compounds of elements of Groups III and V. In this work the electrical properties of GaSb with Sn as substituent were calculated from thermodynamic and other considerations. Another part of the investigation concerned the diffusion of Pb() ions in single crystal KCl over the temperature range of 200 to 475 C. In this study radioactive tracers were used and the constants for the diffusion equation of Pb in KCl were determined. The results support the theory that diffusion occurs by mobile impurity vacancy complexes. Finally, an extensive literature survey of compounds of elements of the I-VII, II-VI, III- V Groups and of the Group IV elements was undertaken and published.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1963
Accession Number
AD0407809

Entities

People

  • A. B. Scott
  • D. S. Bloom
  • F. J. Keneshea
  • W. J. Fredricks

Organizations

  • SRI International

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Air Force
  • Chemistry
  • Compound Semiconductors
  • Conductivity
  • Contracts
  • Crystal Lattices
  • Crystal Structure
  • Free Energy
  • Governments
  • Hall Effect
  • High Temperature
  • Literature Surveys
  • Low Temperature
  • Materials
  • New York
  • Physics
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics