ELECTRICAL RESISTIVITY OF SEMICONDUCTING DIAMOND

Abstract

Semiconducting diamond with its wide energy gap, favorable current carrier mobility, and good mechanical properties holds promise of being a useful high temperature semiconductor material. The data covered include electrical resistivity measured from room temperature to 500 degrees C in an inert atmosphere. Over the lower temperature ranges, below approximately 250 degrees C, the temperature coefficient of resistivity is high, negative, and nonlinear. At the higher temperatures the coefficient rapidly becomes much smaller. A resistivity minimum is observed between 350 and 400 degrees C. The results constitute part of a program involving studies of relationships between defects in the diamond crystal structure and its semiconducting properties.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1962
Accession Number
AD0407912

Entities

People

  • A. D. Johnson
  • J. P. Wielhouwer
  • J. R. Littler

Organizations

  • Air Force Cambridge Research Laboratories

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Conductivity
  • Controlled Atmospheres
  • Current Density
  • Diffraction
  • Electrical Measurement
  • Electrons
  • Energy
  • Government Procurement
  • Governments
  • Heat Of Activation
  • Heat Treatment
  • Low Temperature
  • Materials
  • Measurement
  • Resistance
  • Space Charge

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Nanocomposite Materials Science
  • Plasma Physics.

Technology Areas

  • Microelectronics