VOLTAGE SILICON RECTIFIER STACKS

Abstract

A substantial redesign was made for the sixth set of engineering samples. The redesign was made to eliminate the problems experienced with the insulating fluid at elevated temperatures and to obtain a wider temperature range of operation. Preliminary tests showed the feasibility of the redesign and design tests on the first completed units showed the design to be successful. The new design required a reduction in the number of silicon rectifier diodes per stack. This was achieved by going to 1200 volts peak reverse voltage diodes. The 30 KV stack now contains 28 diodes in series and the 40 KV stack has 37 diodes in series. The reduction in the number of diodes together with an increase in the diode shunt resistance facilitates also the thermal problems. During the quarter the redesign was completed and material for the units pro cured. The sixth set of engineering samples was manufactured and successfully tested.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Mar 25, 1963
Accession Number
AD0408400

Entities

People

  • E. J. Diebold
  • Werner Luft

Tags

Communities of Interest

  • Advanced Electronics
  • Ground and Sea Platforms

DTIC Thesaurus Topics

  • Contracts
  • Dielectric Properties
  • Dielectrics
  • Electric Fields
  • Engineering
  • High Temperature
  • Industrial Preparedness
  • Life Tests
  • Low Temperature
  • Manufacturing
  • Materials
  • Procurement
  • Production Engineering
  • Rdx
  • Resistance
  • Semiconductor Devices
  • Semiconductors

Readers

  • Electrical Engineering
  • Thermal Physics or Thermal Science.

Technology Areas

  • Microelectronics