SEMICONDUCTOR DEVICE CONCEPTS

Abstract

The Cd-CdS liquidus was measured between 700 de grees and 1250 degrees C. In the low-temperature region, the liquidus rises exponentially with temperature similar to that observed in III-V semiconducting compound systems. A new electri cally active defect center, believed to be a native double acceptor, was observed in CdS. It shows identical behavior to a center concurrently observed in CdTe in this laboratory. These centers are formed during heat treatment in a Cd atmosphere. The centers are similar to the double acceptor centers observed in Ge in that they become very effective hole traps at low temperatures.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1963
Accession Number
AD0408664

Entities

People

  • R. N. Hall

Organizations

  • General Electric

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Body Weight
  • Chemical Analysis
  • Chemical Reactions
  • Chemistry
  • Compound Semiconductors
  • Conduction Bands
  • Critical Temperature
  • Electrical Properties
  • Energy Bands
  • Ionization
  • Low Temperature
  • Melting Point
  • Optical Properties
  • Semiconductor Devices
  • Semiconductors
  • Temperature Gradients

Readers

  • Semiconductor Device Technology
  • Snow Cover Descriptors for Reptiles and Their Illustrations.

Technology Areas

  • Microelectronics