SEMICONDUCTOR DEVICE CONCEPTS

Abstract

A status report on the preparation and properties of Ga(As1-xPx) p-n junction lasers is presented. Halogen vapor transport synthesis of Ga(As1-xPx) and its preparation into laser junctions are de scribed. Electrical and optical properties of Ga(As1-xPx) laser junctions are discussed. The present limitations in these properties are re lated to material problems and the very early state of development of Ga(As1-xPx), and are discussed in this context.

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Document Details

Document Type
Technical Report
Publication Date
Feb 28, 1963
Accession Number
AD0409316

Entities

Organizations

  • General Electric

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Space
  • Weapons Technologies

DTIC Thesaurus Topics

  • Air Force
  • Band Gaps
  • Band Structures
  • Crystal Structure
  • Crystals
  • Diodes
  • Electronics
  • Electronics Laboratories
  • Energy Bands
  • Energy Gaps
  • Lasers
  • Materials
  • New York
  • Optical Properties
  • P-N Junctions
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Molecular Photonics/Laser Physics
  • Solar Photovoltaics and Thermoelectric Devices.
  • Systems Analysis and Design

Technology Areas

  • Directed Energy
  • Microelectronics