Material Processing and Phenomena Investigation of Functional Electronic Blocks

Abstract

GaAs epitaxial deposition technology was opti mized to include effects of seed orientation, va por stream composition, temperature, and thermal gradient. Diffusion of zinc from doped SiO2 is well characterized and is used routinely. Work on diffusion of Te and a double diffused transis tor structure was started. Voltage breakdown mechanisms and parameters have been studied for various high resistivity samples. Doped CdS preparation and indium diffusion for surface treatment of high resistivity CdS are routine. A comprehensive analysis of the photocapacitor is presented. GaAs(x)P(1-x) was prepared for all values of x. Adherent layers of GaP have been produced on a GaAs seed by use of an intermediate layer of GaAs(x)P(1-x).

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Document Details

Document Type
Technical Report
Publication Date
May 31, 1963
Accession Number
AD0409475

Entities

People

  • Charles H. Phipps
  • R.c. Sangster
  • Rowland E. Johnson

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Reactions
  • Coefficients
  • Crystal Structure
  • Crystals
  • Dielectrics
  • Diffusion Coefficient
  • Dissipation Factor
  • Electronic Components
  • Films
  • Materials
  • Materials Processing
  • Measurement
  • Plastic Explosives
  • Resistance
  • Semiconductors
  • Space Charge
  • Surface Finishing

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene