CATALYSIS AT SEMICONDUCTOR SURFACES
Abstract
Final stages of autoxidation of benzaldehyde at a Ge surface were examined, to determine the composition of the final oxidation products. While the main product is benzoic acid, there is an appreciable amount of a stable peroxide, which appears to be dibenzoyl peroxide. Treatment of an etched Ge surface with an irradiated benzaldehyde film produced a lower surface recombination rate. It was deduced that reduction in the surface recombination velocity resulted from an increase in the surface barrier height, brought about by the oxidizing action of the benzaldehyde. It was concluded that irradiated benzaldehyde treatment would be valuable final processing of surfaces of semiconductor devices, as it would tend to clean the surface of metallic contamination. An enhanced photoelectric effect was observed after applying a benzaldehyde film to a surface-barrier diode on n-type Ge. Using the theory of charge transfer catalysis, it was possible to correlate the quantum yield of the reaction with the increase in efficiency of the photoelectric effect.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 31, 1963
- Accession Number
- AD0409900
Entities
People
- G. Elliott
- J. A. Radley