GALLIUM ARSENIDE EPITAXIAL FILM GROWTH
Abstract
A third system intended for the preparation of high-resistivity GaAs was completed and put into operation. Six runs were made with iodine as the halogen transport agent for the gallium. No appraciable growth was obtained. A small amount of Zn was added to the gallium of the trichloride system. Successive runs under iden tical conditions yielded steadily decreasing hole concentrations. Variation in dopant vapor pressure yielded no commensurate change in hole concentration. Hydrogen sulfide gas diluted with hydrogen was used as n-type dopant. A technique for making Hall effect and resistivity measure ments on epitaxial GaAs layers was developed. The reflectivity method for measuring high car rier concentrations was refined.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1963
- Accession Number
- AD0409942
Entities
People
- W. Oshinsky