Microwave Diode Research
Abstract
The use of surface-barrier diodes (also known as metal semiconductor and Schottky diodes) on GaAs is considered. As an experimental vehicle for the measurement of impurity densities, surface barrier diodes have been used to map the impurity profile in epitaxial GaAs films. Films produced by three substantially different processes have been examined and the results are shown. Employed as varactors, surface-barrier diodes on epitaxial GaAs are expected to exhibit cut-off frequencies slightly higher than those of diffused diodes. Initial attempts have resulted in zero-bias cut off frequencies of about 150 Gc and degenerate, 5.85 Gc, noise figures of 1 db. A diode based on the properties of an evaporated gold contact on n-type epitaxial silicon that has speeds compara ble to point contact diodes is discussed. This is possible since the gold-silicon diode has suf ficiently low hole injections so that its response time is not governed by minority carriers. This diode was used as a harmonic generator at 11 Gc with an efficiency comparable to that of a GaAs point contact diode. A protective switch using a pair of silicon PIN diode wafers mounted in series across a waveguide that has been operated at X band is discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 10, 1963
- Accession Number
- AD0410011
Entities
People
- D. Kahng
- D. Leenov
- L. A. D'asaro
- R. C. Swenson