"Production Development of a Silicon Planar Epitaxial Transistor with a Maximum Operating Failure Rate of 0.001% Per 1000 Hours at a Confidence Level of 90% at 25 deg C"
Abstract
Research was continued on a program to improve production techniques in order to increase the reliability of silicon planar epitaxial transistor type 2N696 with a maximum operating failure rate of 0.001% per 1000 hours at a confidence level of 90% at 25 C. No changes were made in the surface preparation and epitaxial starting material processes. However, work was done on the die bonding and welding processes and these improvements are presented. The most significant changes involve a switch from gold to aluminum metalization. Another major process improvement involves the conversion of the base diffusion from boron oxide to a boron trichloride process.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1963
- Accession Number
- AD0410097
Entities
Organizations
- Motorola Mobility