HIGH EFFICIENCY TRANSISTOR STRUCTURES

Abstract

Component development continued and circuit development started, especially in the digital area. The linear circuit development is delayed somewhat because the induced-channel field-effect transistor does not have the temperature stability required. Induced-channel field-effect transistors, lead glass capacitors, and aluminum silicon resistors were fabricated and de- emphasized because of instability and failures in life tests. Tantalum- Molybdenum resistors were fabricated and will be used in future design. Diffused field-effect transistors were fabricated but the IDO was not low enough. Units did not have the back gates isolated. Circuit design progressed in the digital area to the point of applying components to a specific layout. Linear circuit design was begun during this quarter.

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Document Details

Document Type
Technical Report
Publication Date
Dec 18, 1962
Accession Number
AD0410224

Entities

People

  • Gerald Luecke

Organizations

  • Texas Instruments

Tags

DTIC Thesaurus Topics

  • Capacitance
  • Contracts
  • Digital Circuits
  • Electrical Engineering
  • Engineering
  • Engineers
  • Failure Mode And Effect Analysis
  • Field Effect Transistors
  • Film Resistors
  • Integrated Circuits
  • Logic Gates
  • Metal Films
  • Metals
  • Refractory Metals
  • Semiconductor Devices
  • Semiconductors
  • Silicon Dioxide

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  • Electronics Engineering