STUDY OF FAILURE MECHANISMS AT SURFACES AND INTERFACES
Abstract
Investigation of the interface between a metal film and a thin-film dielectric, e.g., tantalum tantalum oxide, aluminum-aluminosilicate glass, incorporated in thin-film capacitors were provid ed information necessary to identify and quanti tatively define the characteristic failure mechanisms at these interfaces. The frequency dispersion of capacitance and dissipation factor for the tantalum-tantalum oxide system fits a curve predicted by a mathematical model of the interface based on an exponentially varying resistivity across the interface. Radioactive diffusion studies revealed that irreversible changes in stoichiometry occur across the inter face of thermally, thermal-electrically stressed, tantalum-tantalum oxide interfaces. No correla tion between changes in electrical properties and the observed irreversible diffusion of tantalum across the stressed interface, were made. Results of the investigations on various semiconducting tin oxide film-substrate model systems were revealing in terms of the qualita tive nature of possible failure modes associated with the nature of the substrate interface.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1963
- Accession Number
- AD0410242
Entities
People
- Frank Reed
- Kenneth Greenough
- Neva Johnson
Organizations
- Motorola Mobility